Surface preparation of porous Si-graphene nanocomposites for heteroepitaxy
نویسندگان
چکیده
منابع مشابه
Surface morphology of Cr:Ga2Se3 heteroepitaxy on Si(001)
E. N. Yitamben, ∗ T. C. Lovejoy, D. F. Paul, J. B. Callaghan, F. S. Ohuchi, and M. A. Olmstead Department of Physics, and Center for Nanotechnology (CNT), University of Washington, Box 351560, Seattle, Washington 98195, USA Physical Electronics, Chanhassen, Minnesota 55317, USA Department of Materials Science and Engineering, and Center for Nanotechnology (CNT), University of Washington, Box 35...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B
سال: 2020
ISSN: 2166-2746,2166-2754
DOI: 10.1116/6.0000423